Room-temperature continuous-wave laser operation of electrically-pumped 1.55 μm VECSEL

Electronics Letters

Volumn 40, Issue 11, 2004, Pages 671-672

  El Kurdi, M ^a   Bouchoule, S ^a   Bousseksou, A ^a   Sagnes, I ^a   Plais, A ^b   Strassner, M ^a   Symonds, C ^a,d   Garnache, A ^c   Jacquet, J ^b  

^a UNIV PARIS SUD   (France)

^b NOKIA RESEARCH CENTER   (United States)

^c UNIVERSITÉ MONTPELLIER II   (France)

^d UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; DOPING (ADDITIVES); FIBER OPTIC NETWORKS; GAS DETECTORS; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; RAPID THERMAL ANNEALING; SECOND HARMONIC GENERATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

DISTRIBUTED BRAGG MIRRORS (DBR); THERMAL SELF-HEATING EFFECTS; VERTICAL EXTERNAL-CAVITY SURFCE-EMITTING LASERS (VESCEL);

SEMICONDUCTOR LASERS;

EID: 2942722621     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040445     Document Type: Article

References (7)

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3. Garnache, A., et al.: 'Application of a diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser to high sensitivity intra-cavity absorption spectroscopy', J. Opt. Soc. Am. B, 2000, 17, pp. 1589-1598
4. Garnaehe, A., et al.: '1.5 μm high-power circular TEM00 surface-emitting laser operating in CW at 300 K'. Proc. IPRM, Stockholm, Sweden, 2002
5. Cerutti, L., et al.: 'Low threshold pumped Sb-based VECSEL emitting around 2.1 μm', Electron. Lett., 2002, 39, pp. 290-292
6. Bouchoule, S., et al.: In-P based wavelength tunable monolithic VCSEL structure with InP/air-gap top mirror compatible with a single epitaxy step'. SPIE Photonics Europe Conf., Strasbourg, France, April 2004
7. Mereuta, A., et al.: 'InAlGaAs/InP MQW structures grown by MOVPE in nitrogen atmosphere for 1.55 urn VCSELs', 10th European Workshop on MOVPE, Lecce, Italy, June 2003