Narrow linewidth operation of a tunable optically pumped semiconductor laser

Optics Express

Volumn 12, Issue 22, 2004, Pages 5434-5439

  Abram, Richard H ^a   Gardner, Kyle S ^a   Riis, Erling ^a   Ferguson, Allister I ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; FREQUENCIES; MIRRORS; OPTICAL PUMPING; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; TUNING;

LINEWIDTH; OUTPUT POWER; SINGLE-MODE LASERS; SPATIAL MODES;

SEMICONDUCTOR LASERS;

EID: 10444238582     PISSN: 10944087     EISSN: None     Source Type: Journal    
DOI: 10.1364/OPEX.12.005434     Document Type: Article

References (12)

1. 00 beams," IEEE Photonics Tech. Lett. 9, 1063-1065 (1997).
2. M. A. Holm, D. Burns, A. I. Ferguson, and M. D. Dawson, "Actively stabilized single-frequency vertical-external-cavity AlGaAs laser," IEEE Photon. Technol. Lett. 11, 1551-1553 (1999).
3. S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuos-wave semiconductor disk laser at 1000 nm," Appl Phys. Lett. 82, 3620-3622 (2003).
4. W.J. Alford, T.D. Raymond, and A.A. Allerman, "High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser," J. Opt. Soc. Am. B19, 663-666 (2002).
5. Coherent, Inc. Sapphire series.
6. S. Hoogland, S. Dhanjal, A. C. Tropper, J. S. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, "Passively Mode-Locked Diode-Pumped Surface-Emitting Semiconductor Laser," IEEE Photon Technol. Lett. 12, 1135-1137 (2000).
7. A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes and G. Saint-Girons, and J. S. Roberts, "Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power," Appl. Phys. Lett. 80, 3892-3894 (2002).
8. T. Asano, T. Tojyo, T. Mizuno, M. Takeya, S. Ikeda, K. Shibuya, T. Hino, S. Uchida, and M. Ikeda, "100-mW Kink-Free Blue-Violet Laser Diodes With Low Aspect Ratio," IEEE J. Quantum Electron. 39, 135-140 (2003).
9. J.-M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, and M. Pessa, "0.6W CW GalnNAs vertical external-cavity surface emitting laser operating at 1.32 μm," Electron. Lett. 40, 30-31 (2004).
10. J.E. Hastie, J.M. Hopkins, S. Calvez, C.W. Jeon, D. Burns, R. Abram, E. Riis, A.I. Ferguson, and M.D. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photonics Technol. Lett. 13, 894-896 (2003).
11. Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
12. K.S. Gardner, R.H. Abram, and E. Riis "A birefringent etalon as single-mode selector in a laser cavity," Opt. Express 12, 2365-2370 (2004), http://www.opticsexpress.org/abstract.cfm?URI=OPEX-12-11-2365