Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers

Optical and Quantum Electronics

Volumn 38, Issue 4-6, 2006, Pages 369-379

  Veselinov, K ^a   Grillot, F ^a   Miska, P ^b,e   Homeyer, E ^a   Caroff, P ^a   Platz, C ^a   Even, J ^a   Marie, X ^c   Dehaese, O ^a   Loualiche, S ^a   Ramdane, A ^d  

^a UNIVERSITÉ DE RENNES 1   (France)

^b INSTITUT JEAN LAMOUR   (France)

^c INSA   (France)

^d UNIV PARIS SUD   (France)

^e Laboratoire d'Etude des Nanostructures à Semiconducteurs   (France)

Author keywords

Carrier dynamics; Quantum dots; Rate equation; Semiconductor laser

Indexed keywords

CARRIER DYNAMICS; LASER EMISSIONS; RATE EQUATION; ROOM TEMPERATURE; TIME-RESOLVED PHOTOLUMINESCENCE;

ARSENIC; CURRENT DENSITY; ELECTROLUMINESCENCE; INDIUM; LIGHT TRANSMISSION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR LASERS;

EID: 33646558901     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-006-0037-2     Document Type: Conference Paper

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