Residual impurities in GaN substrates and epitaxial layers grown by various techniques

Journal of Crystal Growth

Volumn 305, Issue 2 SPEC. ISS., 2007, Pages 393-398

  Murthy, Madhu ^a   Freitas Jr , Jaime A ^b   Kim, Jihyun ^c   Glaser, Evan R ^b   Storm, David ^b  

^a GEORGE MASON UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c Korea University   (South Korea)

Author keywords

A1. Emission; A1. Impurities; A2. Freestanding films; A3. Grown from vapor; B1. Nitrides; B2. Semiconductor

Indexed keywords

CRYSTAL IMPURITIES; EPITAXIAL LAYERS; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS;

BACKGROUND IMPURITIES; FREESTANDING FILMS; RECOMBINATION PROCESSES;

GALLIUM NITRIDE;

EID: 34347328101     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.03.029     Document Type: Article

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