Low dislocation density, high power InGaN laser diodes

MRS Internet Journal of Nitride Semiconductor Research

Volumn 9, Issue , 2004, Pages

  Perlin, Piotr ^a   Leszczyski, M ^a   Prystawko, P ^a   Wisniewski, P ^a   Czernetzki, R ^a   Skierbiszewski, C ^a   Nowak, G ^a   Purgal, W ^a   Weyher, J L ^a   Kamler, G ^a   Borysiuk, J ^a   Krysko, M ^a   Sarzynski, M ^a   Suski, T ^a   Litwin Staszewska, E ^a   Dmowski, L ^a   Franssen, G ^a   Grzanka, S ^a   Swietlik, T ^a   Grzegory, I ^a   Bockowski, M ^a   Lucznik, B ^a   Porowski, S ^a   Gorczyca, L ^b   Bering, A ^c   Krupczynski, W ^c   Makarowa, I ^c   Wisniewska, R ^c   Libura, A ^c   more..

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Poland)

^c TopGaN Limited

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); HIGH PRESSURE EFFECTS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; SYNTHESIS (CHEMICAL); ULTRAVIOLET RADIATION;

DISLOCATION DENSITY; HIGH POWER LASER DIODES; OVERGROWTH;

SEMICONDUCTOR LASERS;

EID: 2942720581     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000387     Document Type: Article

References (11)

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