Low-leakage epitaxial PZT thin films grown on Ir/MgO substrates by metalorganic chemical vapor deposition

Integrated Ferroelectrics

Volumn 46, Issue , 2002, Pages 55-64

  Oikawa, T ^a   Takahashi, K ^a   Ishida, J ^b   Ichikawa, Y ^c   Ochiai, T ^c   Saito, K ^d   Sawabe, A ^b   Funakubo, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

^c TOYO Corporation   (Japan)

^d PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

CVD; Epitaxial pzt; Ir; Low leakage current

Indexed keywords

EPITAXIAL GROWTH; IRIDIUM COMPOUNDS; LEAD COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SATURATION (MATERIALS COMPOSITION); VOLUME FRACTION;

EPITAXIAL PZT; LOW LEAKAGE CURRENT;

THIN FILMS;

EID: 0344754646     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580215390     Document Type: Article

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