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Applied Physics Letters

Volumn 83, Issue 22, 2003, Pages 4628-4630

Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator

(6) Li, P W a Liao, W M a Lin, S W a Chen, P S b Lu, S C b Tsai, M J b

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; OXIDATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON ON INSULATOR TECHNOLOGY;

ATOMIC SCALE GERMANIUM QUANTUM DOTS; THERMAL OXIDATION;

ATOMIC PHYSICS;

EID: 0348107240 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1631395 Document Type: Article

Times cited : (31)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.