Characterization of metalorganic chemical vapor deposition growth of cubic GaN by in situ x-ray diffraction

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 2165-2168

  Schmidegg, Klaus ^a   Kharchenko, Alexander ^b,c   Bonanni, Alberta ^a   Sitter, Helmut ^a   Bethke, Johannes ^b   Lischka, Klaus ^c  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b MALVERN INSTRUMENTS LTD   (United Kingdom)

^c UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; GALLIUM NITRIDE; GONIOMETERS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RADIATION SHIELDING; RELAXATION PROCESSES; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; THERMAL EXPANSION; X RAY DIFFRACTION;

FILM THICKNESS; FULL WIDTH AT HALF MAXIMUM (FWHM); HEXAGONAL INCLUSIONS; TERNARY COMPOUNDS;

EPITAXIAL GROWTH;

EID: 4944249763     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1768191     Document Type: Conference Paper

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