Resist-pattern transformation studied by x-ray photoelectron spectroscopy after exposure to reactive plasmas. I. Methodology and examples

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1858-1868

  Pargon, E ^a   Joubert, O ^a   Posseme, N ^a   Vallier, L ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COATINGS; COMPOSITION; ELECTRIC RESISTANCE; ETCHING; MICROELECTRONICS; PHOTONS; PLASMA DIODES; SCANNING ELECTRON MICROSCOPY; SILICON; THICKNESS CONTROL; TOMOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

CRITICAL DIMENSTION (CD); PLASMA PROCESSES; REACTIVE LAYERS; RESIST-PATTERN TRANSFORMATION;

CMOS INTEGRATED CIRCUITS;

EID: 4944245122     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1767037     Document Type: Article

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