Effective formation of interface controlled Y2O3 thin film on Si(1 0 0) in a metal-(ferroelectric)-insulator-semiconductor structure

Microelectronic Engineering

Volumn 85, Issue 8, 2008, Pages 1781-1785

  Kwon, Kwang Ho ^a   Lee, Chang Ki ^b   Yang, Jun Kyu ^b   Choi, Sun Gyu ^b   Chang, Ho Jung ^c   Jeon, Hyeongtag ^d   Park, Hyung Ho ^b  

^a Korea University   (South Korea)

^b Yonsei University   (South Korea)

^c Dankook University   (South Korea)

^d Hanyang University   (South Korea)

Author keywords

Chemical oxide; Interface control; Y2O3; Yttrium silicate

Indexed keywords

YTTRIUM; YTTRIUM OXIDE;

YTTRIUM ALLOYS;

EID: 48949116045     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.05.004     Document Type: Article

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