Electronic properties of hydrogenated silicon nanowires with surface defects

Journal of Applied Physics

Volumn 102, Issue 6, 2007, Pages

  Migas, D B ^a  

^a UNIVERSITY OF LOUISVILLE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; HYDROGENATION; PHOTOLUMINESCENCE; POROUS SILICON; SILICON COMPOUNDS; SURFACE DEFECTS;

ATOMIC VACANCIES; HYDROGENATED SILICON NANOWIRES; OSCILLATOR STRENGTH;

NANOWIRES;

EID: 34848891204     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2779272     Document Type: Article

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