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Volumn 29, Issue 8, 2008, Pages 938-940

A novel 2-Bit/Cell p-channel logic programmable cell with pure 90-nm CMOS technology

Author keywords

2 bit cell; Logic nonvolatile memory (NVM); Nitride storage node; One time programmable (OTP); P channel; Self aligned nitride (SAN)

Indexed keywords

2 BIT/CELL; APPLICATIONS.; CMOS TECHNOLOGIES; LOGIC NONVOLATILE MEMORY (NVM); NITRIDE STORAGE NODE; NON-VOLATILE; ONE-TIME PROGRAMMABLE (OTP); ONE-TIME PROGRAMMABLE MEMORIES; P-CHANNEL; SELF-ALIGNED NITRIDE (SAN);

EID: 48649086667     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000969     Document Type: Article
Times cited : (9)

References (9)
  • 2
    • 43549095330 scopus 로고    scopus 로고
    • A new CMOS logic anti-fuse cell with programmable contact
    • C.-E. Huang, H.-M. Chen, Y.-C. King, and C.-J. Lin, "A new CMOS logic anti-fuse cell with programmable contact," in Proc. NVSMW, 2007, pp. 48-51.
    • (2007) Proc. NVSMW , pp. 48-51
    • Huang, C.-E.1    Chen, H.-M.2    King, Y.-C.3    Lin, C.-J.4
  • 3
    • 14844328031 scopus 로고    scopus 로고
    • Neobit - High reliable logic non-volatile memory (NVM)
    • R. S. C. Wang, R. S. J. Shen, and C. C. H. Hsu, "Neobit - High reliable logic non-volatile memory (NVM)," in Proc. IFPA, 2004, pp. 111-114.
    • (2004) Proc. IFPA , pp. 111-114
    • Wang, R.S.C.1    Shen, R.S.J.2    Hsu, C.C.H.3
  • 4
  • 6
    • 0141563593 scopus 로고    scopus 로고
    • Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse
    • Sep
    • J. Kim and K. Lee, "Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse," IEEE Electron Device Lett., vol. 24, no. 9, pp. 589-591, Sep. 2003.
    • (2003) IEEE Electron Device Lett , vol.24 , Issue.9 , pp. 589-591
    • Kim, J.1    Lee, K.2
  • 8
    • 0034315780 scopus 로고    scopus 로고
    • NROM: A novel localized trapping, 2-bit nonvolatile memory cell
    • Nov
    • B. Eitan, P. Pavam, I. Bloom, E. Aloni, A. Frommer, and D. Finzi, "NROM: A novel localized trapping, 2-bit nonvolatile memory cell," IEEE Electron Device Lett., vol. 21, no. 11, pp. 543-545, Nov. 2000.
    • (2000) IEEE Electron Device Lett , vol.21 , Issue.11 , pp. 543-545
    • Eitan, B.1    Pavam, P.2    Bloom, I.3    Aloni, E.4    Frommer, A.5    Finzi, D.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.