Negative-bias temperature instability induced electron trapping

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Campbell, J P ^a   Cheung, K P ^a   Suehle, J S ^a   Oates, A ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; HYDROGEN; MECHANISMS; METALS; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; NONMETALS; SILICON; TRANSISTORS;

AMERICAN INSTITUTE OF PHYSICS (AIP); DEPASSIVATION; ELECTRON TRAPPING; FIELD EFFECT TRANSISTOR (FET); METAL OXIDES; NEGATIVE BIAS- TEMPERATURE-INSTABILITY (NBTI); P-CHANNEL; PEAK TRANSCONDUCTANCE; TRAPPING/DETRAPPING;

THERMODYNAMIC STABILITY;

EID: 48249132122     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963368     Document Type: Article

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