Transient charging and slow trapping in ultrathin SiO2 films on Si during electron bombardment

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 4, 1997, Pages 2081-2084

  Shamir, N ^a,b   Mihaychuk, J G ^a   Van Driel, H M ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b NUCLEAR RESEARCH CENTER NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031524033     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580612     Document Type: Article

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