Spatial distribution of average charge state and deposition rate in high power impulse magnetron sputtering of copper

Journal of Physics D: Applied Physics

Volumn 41, Issue 13, 2008, Pages

  Horwat, David ^a,b   Anders, André ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INSTITUT JEAN LAMOUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANGULAR DISTRIBUTION; ATOMS; CHARGE DISTRIBUTION; COPPER; DC GENERATORS; DISCHARGE (FLUID MECHANICS); ELECTROLYSIS; ELECTROSTATICS; FLUID MECHANICS; ION BEAMS; IONS; MAGNETIC FIELDS; MAGNETRON SPUTTERING; MAGNETRONS; METAL IONS; SCALE (DEPOSITS); SIZE DISTRIBUTION; SPUTTER DEPOSITION;

ANGULAR POSITIONING; APPLIED VOLTAGES; AVERAGE CHARGE STATE; AVERAGE POWER; COPPER SPECIES; COPPER(II) IONS; DIRECT CURRENT (DC); ELECTROSTATIC PROBES; HIGH CURRENTS; HIGH POWERS; HIGH VOLTAGE LEVEL; ION CURRENTS; MAGNETIC (CE); MAGNETIZED ELECTRONS; SPATIAL DISTRIBUTION OF; TARGET SURFACES; TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31);

DEPOSITION RATES;

EID: 48249131648     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/13/135210     Document Type: Article

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