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Volumn 82, Issue 22, 2003, Pages 3949-3951

Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; X RAY ANALYSIS;

EID: 0038003680     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579871     Document Type: Article
Times cited : (36)

References (21)
  • 3
    • 0032606344 scopus 로고    scopus 로고
    • A. P. Alivisatos, Science (Washington, DC, U.S.) 271, 933 (1996); C. Dekker, Phys. Today 52, 22 (1999).
    • (1999) Phys. Today , vol.52 , pp. 22
    • Dekker, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.