Enhanced light extraction efficiency in flip-chip GaN light-emitting diodes with diffuse Ag reflector on nanotextured indium-tin oxide

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Kim, Ja Yeon ^a   Kwon, Min Ki ^a   Park, Il Kyu ^a   Cho, Chu Young ^a   Park, Seong Ju ^a   Jeon, Dong Min ^b   Kim, Je Won ^b   Kim, Yong Chun ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION; FLIP CHIP DEVICES; GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; OPTICAL DESIGN; REFLECTION; SEMICONDUCTING GALLIUM; SILVER; TIN; TITANIUM COMPOUNDS;

AMERICAN INSTITUTE OF PHYSICS (AIP); DIFFUSE REFLECTORS; FLIP CHIPPING; GAN LIGHT-EMITTING DIODES (LED); INDIUM TIN OXIDE (ITO); LIGHT EXTRACTION EFFICIENCY; NANOTEXTURED; OPTICAL OUTPUT POWER;

SILVER PLATING;

EID: 47549116351     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2953174     Document Type: Article

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