Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography

Applied Physics Letters

Volumn 88, Issue 26, 2006, Pages

  Kubis, Alan J ^a   Vandervelde, Thomas E ^a   Bean, John C ^a   Dunn, Derren N ^b   Hull, Robert ^a  

^a University of Virginia   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED ION BEAM TOMOGRAPHY; SELF-ORGANIZATION; STRAIN FIELD INTERACTIONS;

EPITAXIAL GROWTH; ION BEAMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR SUPERLATTICES; STRAIN; THREE DIMENSIONAL; TOMOGRAPHY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33745616854     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2217930     Document Type: Article

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