Comment on "radiative and nonradiative recombination process in InN films grown by metal organic chemical vapor deposition" [Appl. Phys. Lett. 86, 142104 (2005)]

Applied Physics Letters

Volumn 87, Issue 17, 2005, Pages

  Liu, B ^a   Zhang, R ^a   Xie, Z L ^a   Xiu, X Q ^a   Bi, Z X ^a   Gu, S L ^a   Shi, Y ^a   Zheng, Y D ^a   Hu, L J ^b   Chen, Y H ^b   Wang, Z G ^b   Intartaglia, R ^c   Maleyre, B ^c   Ruffenach, S ^c   Briot, O ^c   Taliercio, T ^c   Gil, B ^c  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c UNIV MONTPELLIER   (France)

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EID: 28344437423     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2117612     Document Type: Review

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