Alloy disorder effects on the room temperature optical properties of Ga 1-xin xN yAs 1-y quantum wells

Applied Physics Letters

Volumn 89, Issue 3, 2006, Pages

  Bansal, Bhavtosh ^a,c   Kadir, Abdul ^a   Bhattacharya, Arnab ^a   Arora, B M ^a   Bhat, Rajaram ^b  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^b SP PR 02 3 ^*  (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOEXCITED CARRIERS; POTENTIAL FLUCTUATIONS; STOKES SHIFT; TRAPPING;

DENSITY (OPTICAL); ELECTRONS; EXCITONS; NITROGEN; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33746314513     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2227618     Document Type: Article

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