Ion sputtering rates of W-, Ti- and Cr-carbides studied at different Ar + ion incidence angles

Applied Surface Science

Volumn 254, Issue 20, 2008, Pages 6611-6618

  Zalar, A ^a   Kovac J ^a   Pracek B ^a   Panjan, P ^a   Ceh M ^a  

^a JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

C; Carbides; Cr; Depth profiling; Ion sputtering rates; Sputtering yields; Ti; W

Indexed keywords

AMORPHOUS CARBON; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; AUGERS; CARBIDES; CESIUM; CHROMIUM; DEPTH PROFILING; GRAPHITE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BEAMS; IONS; SPUTTERING; SURFACE TOPOGRAPHY; TITANIUM; TITANIUM CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE OF INCIDENCE; AUGER ELECTRON SPECTROSCOPIES (AES); COMPOSITIONAL CHARACTERIZATION; ION INCIDENCE ANGLE; ION SPUTTERING RATE; POLYCRYSTALLINE STRUCTURE; SILICON SUBSTRATES; SPUTTERING YIELDS;

CHROMIUM COMPOUNDS;

EID: 47549103484     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.04.049     Document Type: Article

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