A MOSFET electron mobility model of wide temperature range (77-400 K) for IC simulation

Semiconductor Science and Technology

Volumn 12, Issue 4, 1997, Pages 355-358

  Chain, Kenneth ^a   Huang, Jian Hui ^b   Duster, Jon ^a   Ko, Ping K ^c   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INTEL CORPORATION   (United States)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD MEASUREMENT; ELECTROMAGNETIC WAVE SCATTERING; INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE MEASUREMENT;

PHONON SCATTERING;

MOSFET DEVICES;

EID: 0031123077     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/4/002     Document Type: Article

References (11)

1. Duster J S et al 1993 Temperature effects of the inversion layer electron and hole mobility of MOSFETs from 85 K to 500 K 1993 Int. Conf. on Solid State Devices and Materials (Makuhari) (Tokyo: Japan. Soc. Appl. Phys.) pp 835-7
2. Lee K, Choi J-S, Sim S-P and Kim C-K 1991 Physical understanding of low-field carrier mobility in silicon MOSFET inversion layer IEEE Trans. Electron Devices 38 1905-12
3. Huang J et al 1994 BSIM3 Version 2.0 Manual (Electron Research Laboratory, University of California at Berkeley)
4. Cheng Y H, Hu C, Chen K, Chan M, Hui K, Jeng M, Liu Z H, Huang J H and Ko P K 1997 A physical and scalable BSIM I-V model for analog/digital circuit simulation IEEE Trans. Electron Devices 44 (2) at press
5. Wang S 1989 Fundamentals of Semiconductor Theory and Device Physics (Engelwood Cliffs, NJ: Prentice-Hall) section 13.13
6. Schwarz S A and Russek S E 1983 Semi-empirical equations for electron velocity in silicon: Part II - MOS inversion layer IEEE Trans. Electron Devices 30 1634-9
7. Chen K, Zhang G, Duster J, Huang J, Liu Z, Ko P K and Hu C 1997 MOSFET inversion layer capacitance models based on Fermi-Dirac statistics for wide temperature range Solid-State Electron. 40 at press
8. Ferry D K 1984 Effects of surface roughness in inversion layer transport IEDM Tech. Digest 605-8
9. Joen D S and Burk D E 1989 MOSFET electron inversion layer mobilities - a physically based semi-empirical model for a wide temperature range IEEE Trans. Electron Devices 36 1456-63
10. Chen K, Wann H C, Duster J, Yoshida M, Ko P and Hu C 1996 MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages Solid-State Electron. 39 1515-18
11. Chen K, Wann H C, Duster J, Pramanik D, Nariani S, Ko P K and Hu C 1996 An accurate semi-empirical saturation drain current model for LDD N-MOSFET IEEE Electron Device Lett. 17 145-7