A study of photophysics, photoelectrical properties, and photoconductivity relaxation dynamics in the case of nanocrystalline tin(II) selenide thin films

Journal of Physical Chemistry C

Volumn 112, Issue 10, 2008, Pages 3525-3537

  Pejova, Biljana ^a   Tanuševski, Atanas ^a  

^a SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; BISMUTH COMPOUNDS; CARRIER TRANSPORT; CIVIL AVIATION; DIRECT ENERGY CONVERSION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ENERGY GAP; FILMS; GALLIUM ALLOYS; MECHANISMS; MODULATION; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; PHOTOCONDUCTIVITY; PHOTOELECTRICITY; PHOTOREFRACTIVE MATERIALS; POWDERS; THERMIONIC EMISSION; THICK FILMS; THIN FILMS; TIN; TITANIUM COMPOUNDS; TRANSPORT PROPERTIES; VAPOR DEPOSITION;

AMERICAN CHEMICAL SOCIETY (ACS); AS-DEPOSITED FILMS; AVERAGE LIFE TIME; BAND GAP ENERGIES; BARRIER HEIGHT (BH); BULK RECOMBINATION; CARRIER DEPLETION; CHARGE CARRIER TRANSPORT; CRYSTAL BOUNDARIES; DEPOSITED THIN FILMS; DIRECT BAND GAP; EMISSION MECHANISMS; INTERNAL PHOTOELECTRIC EFFECT; NANO-STRUCTURED; NANOCRYSTALLINE (NC-) TIN; NANOCRYSTALLINE FILMS; NON EQUILIBRIUM; OPTICAL SPECTROSCOPIC DATA; PARTIAL CHARGES; PHOTO-ELECTRICAL PROPERTIES; PHOTOPHYSICS; PHOTORESPONSE (PR); RELAXATION DYNAMICS; RELAXATION MECHANISMS; TEMPERATURE RANGES; TIME CONSTANTS; TIME-RESOLVED; TIN (II); TRAP STATES;

CHARGE CARRIERS;

EID: 47349092160     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp0766555     Document Type: Article

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