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Volumn 408, Issue 1-2, 2002, Pages 6-10

Chemical deposition and characterization of glassy bismuth(III) selenide thin films

Author keywords

Band gap; Bismuth(III)selenides; Deposition process; Semi conductors

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHARGE CARRIERS; DEPOSITION; ELECTRIC RESISTANCE; ENERGY GAP; POLYESTERS; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING GLASS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EID: 0037012529     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00085-8     Document Type: Article
Times cited : (58)

References (19)
  • 15
    • 85081194487 scopus 로고    scopus 로고
    • JCPDS-International Centre for Diffraction Data set no. 33-0214


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.