Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films

Journal of Applied Physics

Volumn 98, Issue 3, 2005, Pages

  Meaudre, M ^a   Gueunier Farret, M E ^b   Meaudre, R ^a   Kleider, J P ^b   Vignoli, S ^a   Canut, B ^a  

^a UNIVERSITÉ LYON 1   (France)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP DEFECTS; ELECTRON-CAPTURE CROSS SECTIONS; PHOTORESPONSE; POLYMORPHOUS THIN-FILMS;

ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; GERMANIUM; HYDROGENATION; LINEARIZATION; NANOSTRUCTURED MATERIALS; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON;

THIN FILMS;

EID: 24044473758     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1999831     Document Type: Article

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