Electrical resistivity anisotropy in layered p-SnSe single crystals

Journal of Materials Science: Materials in Electronics

Volumn 11, Issue 1, 2000, Pages 67-71

  Agarwal, Ajay ^a   Vashi, M N ^a   Lakshminarayana, D ^b   Batra, N M ^b  

^a VEER NARMAD SOUTH GUJARAT UNIVERSITY   (India)

^b SARDAR PATEL UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STACKING FAULTS;

CHEMICAL VAPOR TRANSPORT METHOD; DIRECT VAPOR TRANSPORT METHOD; TIN SELENIDE;

SEMICONDUCTING TIN COMPOUNDS;

EID: 0033908887     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008960305097     Document Type: Article

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