Optical and thermal band gap energy of chemically deposited bismuth(III) selenide thin films

Materials Chemistry and Physics

Volumn 83, Issue 2-3, 2004, Pages 245-249

  Pejova, Biljana ^a   Grozdanov, Ivan ^a   Tanuševski, Atanas ^b  

^a SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

^b SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

Author keywords

Electrical properties; Optical properties; Semiconductors; Thin films

Indexed keywords

APPROXIMATION THEORY; BISMUTH COMPOUNDS; ELECTRIC RESISTANCE; ENERGY GAP; EXCITONS; IMPURITIES; IONIZATION; MICROSTRUCTURE; OPTICAL PROPERTIES;

ELECTRONIC TRANSITIONS; IONIZATION ENERGY; OPTICAL SPECTRA; THERMAL BAND GAP;

SEMICONDUCTING FILMS;

EID: 0347540997     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2003.09.009     Document Type: Article

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