Fully self-aligned tri-layer a-Si:H thin-film transistors with deposited doped contact layer

IEEE Electron Device Letters

Volumn 19, Issue 4, 1998, Pages 124-126

  Thomasson, Daniel B ^a,b   Jackson, Thomas N ^a,b  

^a IEEE   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CONTACTS; ELECTRIC CURRENTS; PHOTOLITHOGRAPHY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

CARRIER MOBILITY;

THIN FILM TRANSISTORS;

EID: 0032045659     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.663535     Document Type: Article

References (6)

1. W. E. Howard, "Limitations and prospects of u-Si:H TFT's," J. SID, vol. 3, no. 3, pp. 127-132, Dec. 1995.
2. N. Ibaraki, "a-Si TFT technologies for large-size and high-pixel-density AM-LCD's," in Proc. IUMRS-ICEM'94 Symp., 1994, vol. 3, pp. 523-533.
3. H. H. Busta, J. E. Pogemiller, R. W. Standley, and K. D. Mackenzie, "Self-aligned bottom-gate submicrometer-channel-length a-Si:H thinfilm transistors," Trans. Electron Devices, vol. 36, pp. 2883-2888, Dec. 1989.
4. D. B. Thomasson and T. N. Jackson, "High-mobility tri-layer a-Si:H thin-film transistor with ultrathin active layer," SID Int. Symp. Dig. Tech. Papers, vol. 28, pp. 176-179, May 1997.
5. N. Hirano, N. Ikeda, S. Nishida, and S. Kaneko, "A 33-cm-diagonal high-resolution TFT-LCD with fully self-aligned a-Si TFT's," IEICE Trans. Electron., vol. E79-C, no. 8, pp. 1103-1108, Aug. 1996.
6. Y. Kuo, "A self-Aligned, trilayer, a-Si:H thin film transistor prepared from two photomasks," J. Electrochem. Soc., vol. 139, no. 4, pp. 1199-1204, Apr. 1992.