Investigation of the doping and thickness effects of polysilicon oxide by rapid thermal N2O oxidation

Microelectronic Engineering

Volumn 85, Issue 2, 2008, Pages 408-413

  Kao, Chyuan Haur ^a   Sung, W H ^a   Chen, C S ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Doping; N2O; Phosphorus; Polyoxide

Indexed keywords

POLYOXIDES; THICKNESS EFFECTS;

POLYSILICON;

EID: 47049119822     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.07.015     Document Type: Article

References (22)

1. Hamada T., Saito Y., Hirayama M., Aharoni H., and Ohmi T. Electron. Dev. Lett. IEEE 22 9 (2001) 423-425 Sept
2. Tien Sheng Chao, Wen Luh Yang, Chun-Ming Cheng, Tung Ming Pan, Tan Fu Lei, High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices, VLSI technology, systems, and applications. 2001 International Symposium on 18-20 April (2001) 142-145.
3. 2 technologies, In: IEDM Tech. Dig., 1986, pp. 580-583.
4. 2 PROM's, in: Proceedings of the 1987 IEEE/IRPS, pp. 85-92.
5. H.L. Peek and J.F. Verwey, The characterization and technology of deposited oxides for EEPROM, presented at the Electrochem. Soc. Meeting, San Francisco, CA, May 8-13, 1983.
6. Heimann P.A., Murarka S.P., and Sheng T.T. J. Appl. Phys. 53 (1982) 6240-6245
7. Faraone L., Vibronek R., and Mc Ginn J. IEEE Trans. Electron Dev. ED-32 3 (1985) 577 Mar
8. Faraone L. IEEE Trans. Electron Dev. ED-33 11 (1986) 1785 Nov
9. Mori S., Arai N., and Kaneko Y. Kuniyoshi Yoshikawa. IEEE Trans. Electron Dev. ED-38 2 (1991) 270 Feb
10. Cobianu C., Popa O., and Dascalu D. IEEE Electron Dev. Lett. 14 (1993) 213
11. Kao C.H., Lai C.S., and Lee C.L. IEEE Electron Dev. Lett. 18 (1997) 526
12. Kao C.H., Lai C.S., and Lee C.L. IEEE Trans. Electron Dev. 45 9 (1998) Sep
13. Wu S.L., Lin T.Y., Lee C.L., and Lei T.F. IEEE Electron Dev. Lett. 14 (1994) 113
14. 2 O annealing on MOSFETs, "IEDM Tech. Dig., p. 625, 1992.
15. 2 O, "in IEDM Tech. Dig. p. 421, 1990.
16. Lai C.S., Lei T.F., and Lee C.L. IEEE Electron Dev. Lett. 16 (1995) 385-386
17. Lei T.F., Cheng J.Y., Shiau S.Y., Chiao T.S., and Lai C.S. IEEE Electron Dev. 45 Api. (1998) 912
18. Kao C.H., Lai C.S., and Lee C.L. J. Electrochem. Soc. 153 2 (2006) 128
19. Sterheim M., Kinsbron E., Alspector J., and Heimann P. J. Electrochem. Soc. 130 8 (1983) 1735 Aug
20. Hendriks M., and Mavero C. J. Electrochem. Soc. 138 (1991) 1466
21. Lee J.C., and Hu C. IEEE Trans. Electron Dev. 35 7 (1988) 163 July
22. Wu S.L., Chen C.Y., Lin T.Y., Lee C.L., Lei T.F., and Liang M.S. IEEE Trans. Electron Dev. 44 ED-1 (1997) 153 Jan