Thin inter-polyoxide films for flash memories grown at low temperature (400°C) by oxygen

IEEE Electron Device Letters

Volumn 22, Issue 9, 2001, Pages 423-425

  Hamada, Tatsufumi ^b   Saito, Yuji ^b   Hirayama, Masaki ^b   Aharoni, Herzl ^a,b   Ohmi, Tadahiro ^a,c  

^a IEEE   (Israel)

^b TOHOKU UNIVERSITY   (Japan)

^c BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

Flash EEPROM; Low temperature process; Oxygen radical; Polyoxide

Indexed keywords

OXYGEN RADICALS; POLYOXIDE;

CHEMICAL MECHANICAL POLISHING; ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; FLASH MEMORY; FREE RADICALS; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; MOS CAPACITORS; OXYGEN; PERFORMANCE; PLASMA APPLICATIONS; POLYSILICON;

THIN FILMS;

EID: 0035448345     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.944327     Document Type: Article

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