The TEOS oxide deposited on phosphorus in-situ/POCl3 doped polysilicon with rapid thermal annealing in N2O

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 1927-1933

  Kao, Chyuan Haur ^a   Lai, Chao Sung ^a   Lee, Chung Len ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

N2o, phosphorus in situ; TEOS

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRON TRAPS; IN SITU PROCESSING; NITROGEN OXIDES; OXIDES; PHOSPHORUS; RAPID THERMAL ANNEALING; SEMICONDUCTING POLYMERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

POLYSILICON; TETRAETHYLORTHOSILICATE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032166569     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711357     Document Type: Article

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