Characterization of polysilicon oxides thermally grown and deposited on the polished polysilicon films

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 912-917

  Lei, Tan Fu ^a   Cheng, Juing Yi ^a   Shiau, Shyh Yin ^a   Chao, Tien Sheng ^b   Lai, Chao Sung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL-MECHANICAL POLISHING PROCESS; ELECTRON BARRIER; ELECTRON TRAPPING; LOWER DENSITY; POLY OXIDE; POLYSILICON FILMS; TRAPPED CHARGE;

CHEMICAL MECHANICAL POLISHING; ELECTRIC BREAKDOWN; ELECTRON TRAPS; INTERFACES (MATERIALS); LEAKAGE CURRENTS;

POLYSILICON;

EID: 0003326556     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662802     Document Type: Article

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