Study of the Au/In reaction for transient liquid-phase bonding and 3D chip stacking

Journal of Electronic Materials

Volumn 37, Issue 8, 2008, Pages 1095-1101

  Zhang, W ^a   Ruythooren, W ^a  

^a IMEC   (Belgium)

Author keywords

3D chip stacking; Au In interdiffusion; Flip chip; Transient liquid phase bonding

Indexed keywords

CHIP STACKING; DIFFUSION CONTROLLED; EFFECTIVE DIFFUSION; ELEVATED TEMPERATURES; FLIP CHIP (FC) BONDING; FORMATION KINETICS; IN ORDER; INTERMETALLIC; INTERMETALLIC COMPOUND (IMC); INTERMETALLIC FORMATION; JOINT FORMATION; LOW TEMPERATURE (LTR); SOLDER VOLUME; STACKING TECHNOLOGY; TEMPERATURE DEPENDENT; THREE DIMENSIONAL (3D); TLP BONDING; TRANSIENT LIQUID PHASE (TLP);

ACTIVATION ENERGY; ADDITION REACTIONS; BRAZING; CHEMICAL ACTIVATION; COMPUTER NETWORKS; FLIP CHIP DEVICES; FLUIDS; GOLD; INTERMETALLICS; LIQUID PHASE EPITAXY; METALS; MICROFLUIDICS; MIXTURES; REACTION KINETICS; SEMICONDUCTING INTERMETALLICS; SEMICONDUCTOR DOPING; SOLDERING ALLOYS; TECHNOLOGY; TELLURIUM COMPOUNDS; THREE DIMENSIONAL; TITANIUM; WELDING;

TEMPERATURE;

EID: 46749104665     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0487-3     Document Type: Article

References (28)

1. J.W. Roman and T.W. Eagar, Proceedings of the International Society for Hybrid Microelectronics (ISHM) (1992), p.1.
2. L. Bernstein 1966 J. Electrochem. Soc. 113 1282 10.1149/1.2423806
3. S. Wakiyama, H. Ozaki, Y. Nabe, T. Kume, T. Ezaki, and T. Ogawa, Proc. of ECTC (2007), p. 610.
4. K. Sakuma, P.S. Andry, B. Dang, J. Maria, C.K. Tsang, C. Patel, S.L. Wright, B. Webb, E. Sprogis, S.K. Kang, R. Polastre, R. Horton, and J.U. Knickerbocker, Proc. of ECTC (2007), p. 627.
5. A. Munding, A. Kaiser, P. Benkart, E. Kohn, A. Heittmann, and U. Ramacher, Proc. of IEEE (2006), p. 262.
6. W.W. So C.C. Lee 2000 IEEE T. Compon. Pack. T. 23 377 10.1109/6144.846777
7. T.B. Wang Z.Z. Shen R.Q. Ye X.M. Xie F. Stubhan J. Freytag 2000 J. Electron. Mater. 29 443 10.1007/s11664-000-0158-5
8. C.C. Lee C.Y. Wang 1993 IEEE Trans. Comp. Hybrids Manufact. Technol. 16 311 10.1109/33.232058
9. C.-C. Liu Y.-K. Lin M.-P. Houng Y.-H. Wang 2003 IEEE T. Compon. Pack. T. 26 635 10.1109/TCAPT. 2003.817655
10. M. Mori M. Saito A. Hongu A. Niitsuma H. Ohdaira 1990 IEEE Trans. Comp. Hybrids Manufact. Technol. 13 444 10.1109/33.56182
11. J. Bjontegaard L. Buene T. Finstad O. Lonsjo T. Olsen 1983 Thin Solid Films 101 253 10.1016/0040-6090(83)90252-3
12. F.S. Shieu C.F. Chen J.G. Sheen Z.C. Chang 1999 Thin Solid Films 346 125 10.1016/S0040-6090(98) 01737-4
13. N. Quitoriano W.S. Wong L. Tsakalakos Y. Cho T. Sands 2001 J. Electron. Mater. 30 1471 10.1007/s11664-001-0204-y
14. V. Simic Z. Marinkovic 1977 Thin Solid Films 41 57 10.1016/0040-6090(77) 90009-8
15. M. Paulasto, F. van Loo, and J.K. Kivilahti, J. Alloy Compd. 220, 136 (1995).
16. P. Vianco K. Erickson P. Hopkins 1994 J. Electron. Mater. 23 721 10.1007/BF02651365
17. Haimovich J. 1993. AMP Journal of Technology 3: 46.
18. Laurila T., Vuorinen V., Kivilahti J.K. 2005. Mat. Sci. Eng. R49: 1.
19. A. Paul S. Kodentsov F. van Loo 2006 Intermetallics 14 1428 10.1016/j.intermet.2006.01.051
20. Liu Y.M., Chuang T.H., Electro J. 2003. Mater. 29: 405.
21. G.I. Shohji S. Fujiwara S. Kiyono K.F. Kobayashi 1999 Scrip. Mater. 40 815 10.1016/S1359-6462(99) 00007
22. Y. Hasumi 1985 J. Appl. Phys. 58 3081 10.1063/1.335808
23. Yost F.G. 1977. Gold Bull. 10: 94.
24. M. Millares B. Pieraggi E. Lelievre 1993 Solid State Ionics 63-65 575 10.1016/0167-2738(93)90161-U
25. Waelti M., Schneeberger N., Brand O., Baltes H. 2000. Mat. Res. Soc. Symp. Proc. 605: 183.
26. W. Zhang S.H. Brongersma O. Richard B. Brijs R. Balmans L. Froyen K. Maex 2004 J. Vac. Sci. Technol. B 22 2715 10.1116/1.1819899
27. Jacobson D.M., Humpston G. 1989. Gold Bull. 22: 9.
28. R. Labie, W. Ruythooren, K. Baert, E. Beyne, and B. Swinnen, accepted for IITC 2008.