New high-voltage (> 1200 V) MOSFET with the charge trenches on partial SOI

IEEE Transactions on Electron Devices

Volumn 55, Issue 7, 2008, Pages 1756-1761

  Luo, Xiaorong ^a   Zhang, Bo ^a   Li, Zhaoji ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Charge; Electric field; High voltage; Silicon oninsulator (SOI); Trench

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; FEES AND CHARGES; FINANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION OF GASES; MAGNETISM; MECHANISMS; MILITARY CONSTRUCTION EQUIPMENT; MOS DEVICES; MOSFET DEVICES; SILICON; SILICON ON INSULATOR TECHNOLOGY; WINDOWS;

BREAK DOWN VOLTAGE (BDV); BREAKDOWN MECHANISM; BURIED LAYERS; BURIED OXIDE (BOX) LAYERS; DEPLETION REGIONS; DEVICE STRUCTURES; DRIFT REGIONS; HIGH-VOLTAGE (HV); HIGH-VOLTAGE MOSFET; INVERSION CHARGES; PARTIAL SOI; SELF-HEATING EFFECT (SHE); SILICON ON INSULATOR (SOI); SILICON WINDOWS; STRUCTURE PARAMETERS;

ELECTRON BEAM LITHOGRAPHY;

EID: 46649097014     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.924048     Document Type: Article

References (10)

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