Realizing high breakdown voltages (>600 V) in partial SOI technology

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1655-1660

  Tadikonda, Ramakrishna ^a   Hardikar, Shyam ^a   Narayanan, E M Sankara ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

High voltage; LDMOS; Partial SOI; Power IC; Self heating; VLD

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HEAT LOSSES; POISSON EQUATION; POWER INTEGRATED CIRCUITS; SEMICONDUCTOR DOPING; THICKNESS MEASUREMENT;

HIGH VOLTAGE; LDMOS; PARTIAL SOI; POWER IC; SELF-HEATING; VARIATION IN LATERAL DOPING (VLD); VLD;

SILICON ON INSULATOR TECHNOLOGY;

EID: 2942633298     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.04.005     Document Type: Conference Paper

References (12)

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