New 1200 V MOSFET structure on SOI with SIPOS shielding layer

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 25-28

  Funaki, Hideyuki ^a   Yamaguchi, Yoshihiro ^a   Hirayama, Keizo ^a   Nakagawa, Akio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; POLYCRYSTALLINE MATERIALS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) SHIELDING LAYERS;

MOSFET DEVICES;

EID: 0031630841     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)