SOI high-voltage device with step thickness sustained voltage layer

Electronics Letters

Volumn 44, Issue 1, 2008, Pages 55-56

  Luo, X ^a   Zhang, B ^a   Li, Z ^a   Zhang, W ^a   Zhan, Z ^a   Xu, H ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE;

BURIED LAYERS; SUSTAINED VOLTAGE LAYERS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 37249072859     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20082131     Document Type: Article

References (10)

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