X-ray photoemission and Auger electron spectroscopy analysis of fast responding activated metal oxide silicon carbide gas sensors

Thin Solid Films

Volumn 299, Issue 1-2, 1997, Pages 183-189

  Lloyd Spetz, A ^a   Schmeisser D ^b   Baranzahi, A ^a   Walivaara B ^a   Gopel W ^c   Lundstrom I ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c Inst f Theor Physik   (Germany)

Author keywords

Auger electron spectroscopy; Metal oxide semiconductor structure; Sensors; Silicon carbide; X ray photoelectron spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; SILICON SENSORS; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL OXIDE SEMICONDUCTORS; X RAY PHOTOEMISSION;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0031131422     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09407-2     Document Type: Article

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