Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2471-2477

  Tsai, Yan Ying ^a   Lin, Kun Wei ^b   Chen, Huey Ing ^a   Lu, Chun Tsen ^a   Chuang, Hung Ming ^a   Chen, Chun Yuan ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ENTROPY; HYDROGEN; ISOTHERMS; MOLECULAR DYNAMICS; MOS DEVICES; OPTOELECTRONIC DEVICES; PARTIAL PRESSURE; PHOTOLITHOGRAPHY; REACTION KINETICS; THERMAL EFFECTS; VACUUM APPLICATIONS;

GAS CONCENTRATION; MOLECULAR FLUX;

SCHOTTKY BARRIER DIODES;

EID: 0942300079     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1615980     Document Type: Article

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