Experimental and theoretical investigation on the structural properties of InN grown on sapphire

Thin Solid Films

Volumn 464-465, Issue , 2004, Pages 112-115

  Fujiwara, K ^a   Ishii, A ^a,b   Ohta, J ^c   Fujioka, H ^c,d   Oshima, M ^c  

^a TOTTORI UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

First principles calculation; Laser ablation; Nitrides; Structural properties

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; COMPUTATIONAL METHODS; CRYSTAL STRUCTURE; FILM GROWTH; GALLIUM NITRIDE; GROWTH (MATERIALS); LASER ABLATION; NITRIDES; PULSED LASER DEPOSITION; SUBSTRATES;

FIRST-PRINCIPLES CALCULATIONS; SAPPHIRE SURFACES; STRUCTURAL PROPERTIES; X-RAY BEAMS;

SAPPHIRE;

EID: 4644372823     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.112     Document Type: Article

References (23)

1. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., Chocho K. Jpn. J. Appl. Phys. 36:1997;L1568.
2. Hellman E.S. MRS Internet J. Nitride Semicond. Res. 3:1998;11.
3. Sumiya M., Ogusu N., Yotsuda Y., Itoh M., Fuke S., Nakamura T., Mochizuki S., Sano T., Kamiyama S., Ammano H., Akasaki I. J. Appl. Phys. 93:2003;1311.
4. Shen X.Q., Ide T., Cho S.H., Shimizu M., Hara S., Okumura H., Sonoda S., Shimizu S. J. Cryst. Growth. 218:2000;155.
5. Ohta J., Fujioka H., Furusawa M., Sasai A., Yoshimoto M., Koinura H., Sumiya M., Oshima M. J. Cryst. Growth. 237/239:2002;1153.
6. Ohta J., Fujioka H., Sumiya M., Koinura H., Oshima M. J. Cryst. Growth. 225:2001;73.
7. Takahashi H., Ohta J., Fujioka H., Oshima M. Thin Solid Films. 407:2002;114.
8. Ohta J., Fujioka H., Takahashi H., Oshima M. Phys. Status Solidi, A Appl. Res. 188:2001;497.
9. Ito S., Ohta J., Fujioka H., Oshima M. Appl. Surf. Sci. 197/198:2002;384.
10. Ohta J., Fujioka H., Takahashi H., Oshima M. Appl. Surf. Sci. 190:2002;352.
11. Ohta J., Fujioka H., Kawano M., Oshima M. Phys. Status Solidi, C. 0:2002;554.
12. Ito S., Fujioka H., Ohta J., Takahashi H., Oshima M. Phys. Status Solidi, C. 0:2002;192.
13. Ohta J., Fujioka H., Takahashi H., Oshima M. Appl. Surf. Sci. 197/198:2002;486.
14. Ohta J., Fujioka H., Takahashi H., Sumiya M., Oshima M. J. Cryst. Growth. 233:2002;486.
15. Ohta J., Fujioka H., Oshima M., Fujiwara K., Ishii A. Appl. Phys. Lett. 83:2003;3075.
16. Ohta J., Honke T., Fujioka H., Oshima M. Thin Solid Films. 457:2004;109.
17. Perdew J.P., Burke K., Ernzerhof M. Phys. Rev. Lett. 77:1996;3865.
18. Perdew J.P., Burke K., Ernzerhof M. Phys. Rev. Lett. 78:1997;1396.
19. Ishii A., Miyake D., Aisaka T. Jpn. J. Appl. Phys. 41:2002;L842.
20. Zywietz T., Neigebauer J., Scheffler M. Appl. Phys. Lett. 73:1998;487.
21. Kleinman L., Bylander D.M. Phys. Rev. Lett. 48:1982;1425.
22. Troullier N., Martins J.L. Phys. Rev., B. 43:1991;1993.
23. Vanderbilt D. Phys. Rev., B. 41:1990;7892.