Influence of molybdenum on the formation of C54TiSi2: Template phenomenon versus grain-size effect

Applied Physics Letters

Volumn 76, Issue 14, 2000, Pages 1831-1833

  Zhang, S L ^a   D'Heurle, F M ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000191975     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126180     Document Type: Article

References (24)

1. R. W. Mann, G. L. Miles, T. A. Knotts, D. W. Rakowski, L. A. Clevenger, J. M. E. Harper, F. M. d'Heurle, and C. Cabral, Jr., Appl. Phys. Lett. 67, 3729 (1995).
2. A. Mouroux, S.-L. Zhang, W. Kaplan, S. Nygren, M. Östling, and C. S. Petersson, Appl. Phys. Lett. 69, 975 (1996).
3. A. Mouroux, S.-L. Zhang, W. Kaplan, S. Nygren, M. Östling, and C. S. Petersson, in Advanced Metallization for ULSI, edited by K. N. Tu, J. W. Mayer, J. M. Poate, and L. J. Chen (Materials Research Society, Pittsburgh, PA, 1996), pp. 511-516.
4. A. Mouroux, S.-L. Zhang, and C. S. Petersson, Phys. Rev. B 56, 10614 (1997).
5. C. Cabral, Jr., L. A. Clevenger, J. M. E. Harper, F. M. d'Heurle, R. A. Roy, K. L. Saenger, G. L. Miles, and R. W. Mann, J. Mater. Res. 12, 304 (1997).
6. C. Cabral, Jr., L. A. Clevenger, J. M. E. Harper, F. M. d'Heurle, R. A. Roy, C. Lavoie, G. L. Miles, R. W. Mann, and J. S. Nakos, Appl. Phys. Lett. 71, 3531 (1997).
7. A. Mouroux, B. Reynard, and S.-L. Zhang, in Advanced Metallisation and Interconnect Systems for ULSI Application in 1997, edited by R. Cheung, J. Klein, K. Tsubouchi, M. Murakami, and N. Kobayashi (Material Research Society, Warrendale, PA, 1998), pp. 605-609.
8. J. A. Kittl, M. A. Gribelyuk, and S. B. Samavedam, Appl. Phys. Lett. 73, 900 (1998).
9. S.-L. Zhang, C. Lavoie, C. Cabral, Jr., J. M. E. Harper, F. M. d'Heurle, and J. Jordan-Sweet, J. Appl. Phys. 85, 2617 (1999).
10. A. Mouroux and S.-L. Zhang, J. Appl. Phys. 86, 704 (1999).
11. A. Mouroux, M. Roux, S.-L. Zhang, F. M. d'Heurle, C. Cabral, Jr., C. Lavoie, and J. M. E. Harper, J. Appl. Phys. 86, 2323 (1999).
12. S. L. Cheng, J. J. Jou, L. J. Chen, and B. Y. Tsui, J. Mater. Res. 14, 2061 (1999).
13. M. Roux, A. Mouroux, and S.-L. Zhang, in Advanced Interconnects and Contacts, edited by D. C. Edelstein, T. Kikkawa, M. C. Öztürk, K. N. Tu, and E. J. Weitzman (Materials Research Society, Warrendale, PA, 1999), pp. 53-58.
14. B. Jung, Y. D. Kim, W. Yang, R. J. Nemanich, and H. Jeon, in Advanced Interconnects and Contacts, edited by D. C. Edelstein, T. Kikkawa, M. C. Öztürk, K. N. Tu, and E. J. Weitzman (Materials Research Society, Warrendale, PA, 1999), pp. 59-64.
15. H. J. W. van Houtum, I. J. M. M. Raaijmakers, and T. J. M. Menting, J. Appl. Phys. 61, 3116 (1987).
16. H. J. Goldschmidt, Interstitial Alloys (Butterworths, London, 1967), pp. 322-330.
17. F. M. d'Heurle, in VLSI Science and Technology, edited by C. Dell'Oca and W. M. Bullies (The Electrochemical Society, Pennington, NJ, 1982), pp. 194-212.
18. A. Mouroux, Ph.D. thesis (Kungliga Tekniska Högskolan, Stockholm, 1999).
19. I. Engström and B. Lönnberg, J. Appl. Phys. 63, 4476 (1988).
20. A. Mouroux, T. Epicier, S.-L. Zhang, and P. Pinard, Phys. Rev. B 60, 9165 (1999).
21. S. Ohmi and R. T. Tung, J. Appl. Phys. 86, 3655 (1999).
22. S.-L. Zhang and F. M. d'Heurle, Thin Solid Films 256, 155 (1995).
23. S.-L. Zhang, F. M. d'Heurle, C. Lavoie, C. Cabral, Jr., and J. M. E. Harper, Appl. Phys. Lett. 73, 312 (1998).
24. F. M. d'Heurle, J. Mater. Res. 3, 167 (1988).