-
1
-
-
0000366312
-
Uber den enstelhungsort der photoelektronen in kuper-kuperoxyydul-photozellen
-
Schottky W 1930 Uber den enstelhungsort der photoelektronen in kuper-kuperoxyydul-photozellen Phys. Z. 31 913-25
-
(1930)
Phys. Z.
, vol.31
, pp. 913-925
-
-
Schottky, W.1
-
2
-
-
3643111799
-
A new semiconductor photocell using lateral photoeffect
-
Wallmark J 1957 A new semiconductor photocell using lateral photoeffect Proc. IRE. 45 474-83
-
(1957)
Proc. IRE.
, vol.45
, pp. 474-483
-
-
Wallmark, J.1
-
3
-
-
0002896497
-
Planar silicon photosensors
-
ed L Ristik (Boston, MA: Artech House)
-
Geist J 1994 Planar silicon photosensors Sensor Technology and Devices ed L Ristik (Boston, MA: Artech House) pp 317-40
-
(1994)
Sensor Technology and Devices
, pp. 317-340
-
-
Geist, J.1
-
4
-
-
0029292137
-
Lateral photoeffect in large area one-dimensional thin film position-sensitive detectors based in a-Si P-I-N devices
-
Martins R and Fortunato E 1995 Lateral photoeffect in large area one-dimensional thin film position-sensitive detectors based in a-Si P-I-N devices Rev. Sci. Instrum. 66 2927-34
-
(1995)
Rev. Sci. Instrum.
, vol.66
, pp. 2927-2934
-
-
Martins, R.1
Fortunato, E.2
-
8
-
-
0002631488
-
Carrier transport properties of dc magnetron reactive sputtered a-Si:H films
-
ed A Madun, M J Thompson, P C Taylor, Y Hamayawa and P G LeComber (Pittsburgh, PA: Materials Research Society)
-
Pinarbarsi M, Maley N, Abelson J R, Chu V and Wagner S 1989 Carrier transport properties of dc magnetron reactive sputtered a-Si:H films Amorphous Silicon Technology vol 149, ed A Madun, M J Thompson, P C Taylor, Y Hamayawa and P G LeComber (Pittsburgh, PA: Materials Research Society) pp 205-10
-
(1998)
Amorphous Silicon Technology
, vol.149
, pp. 205-210
-
-
Pinarbarsi, M.1
Maley, N.2
Abelson, J.R.3
Chu, V.4
Wagner, S.5
-
9
-
-
0030736563
-
Widegap a-Si:H films prepared at low substrate temperature
-
Saha S C, Ghosh S and Ray S 1997 Widegap a-Si:H films prepared at low substrate temperature Sol. Energy Mater. Sol. Cells 45 115-26
-
(1997)
Sol. Energy Mater. Sol. Cells
, vol.45
, pp. 115-126
-
-
Saha, S.C.1
Ghosh, S.2
Ray, S.3
-
10
-
-
0002746114
-
Incorporation in sputter-deposited, in-chamber annealed amorphous silicon thin films: An infrared and elastic recoil analysis
-
Ruther R, Livingstone J, Dytlewski N and Cohen D 1994 Incorporation in sputter-deposited, in-chamber annealed amorphous silicon thin films: an infrared and elastic recoil analysis Phys. Status Solidi a 145 K37-42
-
(1994)
Phys. Status Solidi a
, vol.145
-
-
Ruther, R.1
Livingstone, J.2
Dytlewski, N.3
Cohen, D.4
-
11
-
-
21544455021
-
Reversible condictivity changes in discharge-produced amorphous Si
-
Staebler D L and Wronski C R 1977 Reversible condictivity changes in discharge-produced amorphous Si Appl. Phys. Lett. 31 292-4
-
(1977)
Appl. Phys. Lett.
, vol.31
, pp. 292-294
-
-
Staebler, D.L.1
Wronski, C.R.2
-
13
-
-
0000372450
-
Large area 1D thin-film position-sensitive detector with high detection resolution
-
Fortunato E, Lavareda G, Martins R, Soares F and Fernandez L 1996 Large area 1D thin-film position-sensitive detector with high detection resolution Sensors Actuators A 51 135-42
-
(1996)
Sensors Actuators A
, vol.51
, pp. 135-142
-
-
Fortunato, E.1
Lavareda, G.2
Martins, R.3
Soares, F.4
Fernandez, L.5
-
14
-
-
0021094847
-
A-Si:H MIS position sensitive detectors by anodic oxidation processes
-
Arimoto S, Yamamoto H, Ohno H and Hasegawa H 1983 A-Si:H MIS position sensitive detectors by anodic oxidation processes Electron. Lett. 19 628-9
-
(1983)
Electron. Lett.
, vol.19
, pp. 628-629
-
-
Arimoto, S.1
Yamamoto, H.2
Ohno, H.3
Hasegawa, H.4
-
16
-
-
0001457335
-
Thin film position sensitive detector based on amorphous silicon p-i-n diode
-
Fortunato E, Lavareda G, Vieira M and Martins R 1994 Thin film position sensitive detector based on amorphous silicon p-i-n diode Rev. Sic. Instrum. 65 3784-6
-
(1994)
Rev. Sic. Instrum.
, vol.65
, pp. 3784-3786
-
-
Fortunato, E.1
Lavareda, G.2
Vieira, M.3
Martins, R.4
-
17
-
-
0030260893
-
Homogenous CVD a-Si:H thin film based position sensitive photo detector
-
Toneva A, Mihailova T, Sueva D and Georgiev S 1996 Homogenous CVD a-Si:H thin film based position sensitive photo detector Vacuum 47 1207-9
-
(1996)
Vacuum
, vol.47
, pp. 1207-1209
-
-
Toneva, A.1
Mihailova, T.2
Sueva, D.3
Georgiev, S.4
-
18
-
-
0032649410
-
Two-co-ordinate position sensitive amorphous silicon photodetectors
-
Toneva A and Sueva D 1999 Two-co-ordinate position sensitive amorphous silicon photodetectors Sensors Actuators 73 210-14
-
(1999)
Sensors Actuators
, vol.73
, pp. 210-214
-
-
Toneva, A.1
Sueva, D.2
-
19
-
-
0000320596
-
Role of the resistive layer on the performance of 2D a-Si:H thin film position sensitive detectors
-
Martins R and Fortunato E 1999 Role of the resistive layer on the performance of 2D a-Si:H thin film position sensitive detectors Thin Solid Films 337 158-62
-
(1999)
Thin Solid Films
, vol.337
, pp. 158-162
-
-
Martins, R.1
Fortunato, E.2
-
20
-
-
0035948961
-
Carrier transport in a position sensitive detector based on an ITO/a-Si/Pd
-
Nedev N, Georgiev S S, Sueva D, Smirnov N and Toneva A 2001 Carrier transport in a position sensitive detector based on an ITO/a-Si/Pd Sensors Actuators A 93 48-51
-
(2001)
Sensors Actuators A
, vol.93
, pp. 48-51
-
-
Nedev, N.1
Georgiev, S.S.2
Sueva, D.3
Smirnov, N.4
Toneva, A.5
-
21
-
-
0005209934
-
Imaging transfer devices operated by PSD mode a-Si p-i-n junctions
-
Yamaguchi M, Murakami S, Todo S and Tawada Y 1989 Imaging transfer devices operated by PSD mode a-Si p-i-n junctions Mater. Symp. Proc. 149 631-42
-
(1989)
Mater. Symp. Proc.
, vol.149
, pp. 631-642
-
-
Yamaguchi, M.1
Murakami, S.2
Todo, S.3
Tawada, Y.4
-
22
-
-
0027906993
-
A position detector based on the lateral photoeffect in a-Si:H/metal (Ti, Mo) multilayers
-
Panckow A, Blasing J and Drusedau T 1993 A position detector based on the lateral photoeffect in a-Si:H/metal (Ti, Mo) multilayers J. Non-cryst. Solids 164-5 845-8
-
(1993)
J. Non-Cryst. Solids
, vol.164-165
, pp. 845-848
-
-
Panckow, A.1
Blasing, J.2
Drusedau, T.3
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