Channel switching and magnetoresistance of a metal-SiO2-Si structure

Journal of Physics D: Applied Physics

Volumn 33, Issue 11, 2000, Pages

  Dai, J ^a,b   Spinu, L ^a   Wang, K Y ^a   Malkinski, L ^a   Tang, J ^a  

^a UNIVERSITY OF NEW ORLEANS   (United States)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; METALLIC FILMS; SILICA; SILICON; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS;

CHANNEL SWITCHING; METAL OXIDE SEMICONDUCTOR STRUCTURE; THRESHOLD VALUE;

MAGNETORESISTANCE;

EID: 0033687035     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/33/11/101     Document Type: Article

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