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Volumn 516, Issue 20, 2008, Pages 6853-6857

Distributed electron cyclotron resonance plasma: A technology for large area deposition of device-quality a-Si:H at very high rate

Author keywords

Amorphous silicon; Gas flow rate; High deposition rate; Residence time; Sheath potential

Indexed keywords

AMORPHOUS MATERIALS; ANTENNA ACCESSORIES; ARCHITECTURAL DESIGN; ATOMIC LAYER DEPOSITION; CHARGED PARTICLES; COMPUTER NETWORKS; CYCLOTRON RESONANCE; CYCLOTRONS; DEPOSITION RATES; DIRECT ENERGY CONVERSION; ELECTRON CYCLOTRON RESONANCE; ELECTRONS; FLOW RATE; INJECTION (OIL WELLS); MAGNETISM; METROPOLITAN AREA NETWORKS; MICROFLUIDICS; NETWORK PROTOCOLS; PARTICLE ACCELERATORS; PHOTOVOLTAIC CELLS; PLASMA (HUMAN); PLASMA DEPOSITION; PLASMAS; POLYCRYSTALLINE MATERIALS; RESONANCE; RHENIUM; SCALE (DEPOSITS); SILANES; SILICON; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; SPUTTER DEPOSITION; STEEL STRUCTURES; SURFACE DEFECTS; SURFACE POTENTIAL; TECHNOLOGY; THICK FILMS; THIN FILMS; VAPOR DEPOSITION;

EID: 45949093157     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.045     Document Type: Article
Times cited : (7)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.