![]() |
Volumn 516, Issue 20, 2008, Pages 6853-6857
|
Distributed electron cyclotron resonance plasma: A technology for large area deposition of device-quality a-Si:H at very high rate
|
Author keywords
Amorphous silicon; Gas flow rate; High deposition rate; Residence time; Sheath potential
|
Indexed keywords
AMORPHOUS MATERIALS;
ANTENNA ACCESSORIES;
ARCHITECTURAL DESIGN;
ATOMIC LAYER DEPOSITION;
CHARGED PARTICLES;
COMPUTER NETWORKS;
CYCLOTRON RESONANCE;
CYCLOTRONS;
DEPOSITION RATES;
DIRECT ENERGY CONVERSION;
ELECTRON CYCLOTRON RESONANCE;
ELECTRONS;
FLOW RATE;
INJECTION (OIL WELLS);
MAGNETISM;
METROPOLITAN AREA NETWORKS;
MICROFLUIDICS;
NETWORK PROTOCOLS;
PARTICLE ACCELERATORS;
PHOTOVOLTAIC CELLS;
PLASMA (HUMAN);
PLASMA DEPOSITION;
PLASMAS;
POLYCRYSTALLINE MATERIALS;
RESONANCE;
RHENIUM;
SCALE (DEPOSITS);
SILANES;
SILICON;
SOLAR CELLS;
SOLAR ENERGY;
SOLAR EQUIPMENT;
SPUTTER DEPOSITION;
STEEL STRUCTURES;
SURFACE DEFECTS;
SURFACE POTENTIAL;
TECHNOLOGY;
THICK FILMS;
THIN FILMS;
VAPOR DEPOSITION;
(1 1 0) SURFACE;
(OTDR) TECHNOLOGY;
BAND GAPS;
DEPLETION MODES;
DEPOSITION TEMPERATURE (TD);
DEVICE-QUALITY;
DIELECTRIC FUNCTIONS;
DISTRIBUTED ELECTRON CYCLOTRON RESONANCE (DECR);
FAST DEPOSITION;
FILL FACTOR (FF);
FLOW RATE RATIOS;
GAS RESIDENCE;
HIGH RATES;
HIGH-DENSITY PLASMA (HDP);
HYDROGENATED AMORPHOUS SILICON (A-SI:H);
ION ENERGIES;
LARGE AREA DEPOSITION;
LARGE AREAS;
LOW PRESSURE (LP);
MAGNETIC CONFINEMENT;
MINORITY CARRIER DIFFUSION LENGTH;
POINT INJECTION;
REACTOR DESIGNS;
SHEATH POTENTIAL;
SUBSTRATE TEMPERATURE (ST);
THIN FILM SOLAR CELLS;
AMORPHOUS SILICON;
|
EID: 45949093157
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2007.12.045 Document Type: Article |
Times cited : (7)
|
References (12)
|