The effects of RF plasma excitation frequency and doping gas on the deposition of polymorphous silicon thin films

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 259-263

  Suendo, V ^a   Kharchenko, A V ^a   Roca i Cabarrocas, P ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Deposition rate; Doping; PECVD; Polymorphous silicon; VHF technique

Indexed keywords

AGGLOMERATION; COUPLINGS; DOPING (ADDITIVES); ELECTRODES; ELLIPSOMETRY; NANOSTRUCTURED MATERIALS; OPTIMIZATION; PHOTOVOLTAIC EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SURFACE ROUGHNESS; THIN FILM TRANSISTORS;

DEPOSITION RATE; DOPANTS; POLYMORPHOUS SILICON; VHF TECHNIQUE;

THIN FILMS;

EID: 18144450882     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.019     Document Type: Conference Paper

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