Polycrystalline silicon obtained by metal induced crystallization using different metals

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 334-339

  Pereira, L ^a   Aguas H ^a   Martins, R M S ^a   Vilarinho, P ^b   Fortunato, E ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

Annealing; Metal induced crystallization; Polycrystalline silicon

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ELLIPSOMETRY; LOW TEMPERATURE PHENOMENA; MOLECULAR STRUCTURE; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; POLYSILICON; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LPCVD; METAL-INDUCED CRYSTALLIZATION (MIC);

THIN FILMS;

EID: 17644449058     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.124     Document Type: Conference Paper

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