Optimization of n-i-p protocrystalline SiGe:H thin film solar cells for application in thin film multijunction solar cells

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1941-1944

  Li, H ^a   Stolk, R L ^a   van der Werf, C H M ^a   Franken, R H ^a   Rath, J K ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

Amorphous semiconductors; Band structure; Chemical vapor deposition; Conductivity; Devices; Electrical and electronic properties; Films and coatings; Indium tin oxide and other transparent conductors; Medium range order; Photoconductivity; Photovoltaics; Plasma deposition; Silicon; Solar cells; Sputtering; Structure

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CHEMICAL VAPOR DEPOSITION; COATINGS; CRYSTALLINE MATERIALS; ELECTRIC POTENTIAL; ELECTRONIC PROPERTIES; ENERGY GAP; FILMS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SPUTTERING; THIN FILMS;

AMORPHOUS SEMICONDUCTORS; ELECTRICAL AND ELECTRONIC PROPERTIES; FILMS AND COATINGS; INDIUM TIN OXIDE AND OTHER TRANSPARENT CONDUCTORS; MEDIUM-RANGE ORDER;

SOLAR CELLS;

EID: 33744532241     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.01.059     Document Type: Article

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