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Volumn 92, Issue 24, 2008, Pages

Growth and characterization of crack-free semipolar {1-101} InGaNGaN multiple-quantum well on V-grooved (001)Si substrates

(4) Chen, Guan Ting a Chang, Shih Pang a Chyi, Jen Inn a Chang, Mao Nan b

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

b NATIONAL NANO DEVICE LABORATORIES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; ELECTRIC EXCITATION; ELECTRIC FIELDS; ELECTROACUPUNCTURE; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; EPITAXIAL GROWTH; GALLIUM NITRIDE; ION BEAM ASSISTED DEPOSITION; MAGNETISM; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROFLUIDICS; MOLECULAR BEAM EPITAXY; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON; STAGES; VAPOR DEPOSITION;

(1 1 0) SURFACE; AMERICAN INSTITUTE OF PHYSICS (AIP); CRACK FREE; GAN FACETS; GAN FILMS; GAN TEMPLATES; GROWTH OF GAN; GROWTH STAGES; INTERNAL ELECTRIC FIELDS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); MULTIPLE QUANTUM WELL (MQM); SEMIPOLAR; SI(2 1 1) SUBSTRATES; TIME-RESOLVED PHOTOLUMINESCENCE (TRPL); TWO STAGES; V GROOVES;

GALLIUM ALLOYS;

EID: 45749158061 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2946655 Document Type: Article

Times cited : (19)

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