Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

  Bejtka, K ^a,b   Rveret F ^c   Martin, R W ^a,b   Edwards, P R ^a   Vasson, A ^c   Leymarie, J ^c   Sellers, I R ^b   Duboz, J Y ^b   Leroux, M ^b   Semond, F ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b CRHEA CNRS   (France)

^c UNIVERSITÉ BLAISE PASCAL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROCAVITIES; MIRRORS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; REFLECTION; SEMICONDUCTING GALLIUM; SILICON;

AMERICAN INSTITUTE OF PHYSICS (AIP); ANTI CROSSING; BRAGG MIRRORS; DIELECTRIC MIRRORS; ETCH STOP; LIGHT-MATTER COUPLING; LOW TEMPERATURE (LTR); MICROCAVITY (MC); NORMAL MODES; POLARITON LINEWIDTH; SI(2 1 1) SUBSTRATES; STRONG-COUPLING REGIME; TRANSMISSION SPECTRUMS;

MOLECULAR BEAM EPITAXY;

EID: 45749112549     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2944263     Document Type: Article

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