Tuning of the detection wavelength in quantum dots-in-a-well infrared photodetectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6940, Issue , 2008, Pages

  Hoglund L ^a,b   Holtz, P O ^b   Asplund, C ^c   Wang, Q ^a   Almqvist, S ^a   Petrini, E ^a   Malm, H ^c   Pettersson, H ^d,e   Andersson, J Y ^a  

^a Nanoelectronics   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c IRNOVA AB   (Sweden)

^d HALMSTAD UNIVERSITY   (Sweden)

^e LUND UNIVERSITY   (Sweden)

Author keywords

DWELL; GaAs; InAs; MOVPE; Photocurrent; QDIP; Quantum dot; Responsivity

Indexed keywords

COMPUTER NETWORKS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; INFRARED DETECTORS; INFRARED RADIATION; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; TECHNOLOGY; TUNING;

DETECTION WAVELENGTHS; DISCRETE BANDS; DISCRETE STATES; DWELL STRUCTURES; INFRARED (IR) WAVELENGTHS; INFRARED PHOTO DETECTORS; INFRARED TECHNOLOGIES; INTERSUBBAND TRANSITION (ISB T); QUANTUM DOT (CO); QUANTUM DOT ENERGY LEVELS; QUANTUM DOT INFRARED PHOTODETECTORS (QDIPS); QUANTUM DOT LAYERS; QUANTUM WELLS; SUB BAND (SB);

SEMICONDUCTOR QUANTUM DOTS;

EID: 45549110325     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.781227     Document Type: Conference Paper

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